FDB050AN06A0, Транзистор N-MOSFET 60В 18A/80A [D2-PAK]

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Номенклатурный номер: 9000568546

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types.

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Resistance	11 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	245 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	D2PAK(TO-263)
Pin Count	3
Series	PowerTrench
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	61 nC @ 10 V
Width	9.65mm
Вес, г	2.5