FDMC6679AZ, Транзистор
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см. техническую документацию
см. техническую документацию
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Описание
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 51 A |
| Maximum Drain Source Resistance | 18 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 41 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | MicroFET 2x2 |
| Pin Count | 8 |
| Series | PowerTrench |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V |
| Width | 3.3mm |
| Вес, г | 1 |
