IGW40N65H5FKSA1, Транзистор БТИЗ, биполярный, 650В, 74А, 250Вт, PG-TO247-3
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см. техническую документацию
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Описание
The IGW40N65H5 is a High Speed IGBT in TRENCHSTOP™ 5 technology. The TRENCHSTOP™ 5 IGBT technology redefines best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market's high efficiency demands of tomorrow. It features best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability.
• Factor 2.5 lower Qg
• Factor 2 reduction in switching losses
• Low COES/EOSS
• Mild positive temperature coefficient VCE (sat)
• Temperature stability of Vf
• Higher power density design
• Plug-and-play replacement of previous generation
• Low gate charge QG
• 200mV Reduction in VCE (sat)
• 50V Increase in the bus voltage possible without compromising reliability
• Green product
• Halogen-free
Технические параметры
Collector Emitter Saturation Voltage | 1.65В |
Collector Emitter Voltage Max | 650В |
Continuous Collector Current | 40А |
Power Dissipation | 255Вт |
Количество Выводов | 3вывод(-ов) |
Линейка Продукции | TRENCHSTOP 5 |
Максимальная Рабочая Температура | 175°C |
Монтаж транзистора | Through Hole |
Стиль Корпуса Транзистора | TO-247 |
Automotive | No |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
Lead Shape | Through Hole |
Maximum Collector-Emitter Voltage (V) | 650 |
Maximum Continuous Collector Current (A) | 74 |
Maximum Gate Emitter Leakage Current (uA) | 0.1 |
Maximum Gate Emitter Voltage (V) | ±20 |
Maximum Operating Temperature (°C) | 175 |
Maximum Power Dissipation (mW) | 250 |
Minimum Operating Temperature (°C) | -40 |
Mounting | Through Hole |
Packaging | Tube |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Standard Package Name | TO-247 |
Supplier Package | TO-247 |
Tab | Tab |
Typical Collector Emitter Saturation Voltage (V) | 1.65 |
Вес, г | 6.1 |