IKP20N60TXKSA1, БТИЗ транзистор, универсальный, 40 А, 2.05 В, 166 Вт, 600 В, TO-220, 3 вывод(-ов)

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Номенклатурный номер: 8870299752

Полупроводники - Дискретные\IGBTs\БТИЗ Одиночные

Описание Транзистор: IGBT, 600В, 20А, 166Вт, TO220-3, одиночный транзистор Характеристики

Brand	Infineon Technologies
Collector- Emitter Voltage VCEO Max	600 V
Collector-Emitter Saturation Voltage	1.5 V
Configuration	Single
Continuous Collector Current at 25 C	41 A
Factory Pack Quantity	500
Gate-Emitter Leakage Current	100 nA
Height	9.25 mm
Length	10 mm
Manufacturer	Infineon
Maximum Gate Emitter Voltage	+/-20 V
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-40 C
Mounting Style	Through Hole
Package / Case	TO-220-3
Packaging	Tube
Part # Aliases	IKP20N60TXKSA1 IKP2N6TXK SP000683066
Pd - Power Dissipation	166 W
Product Category	IGBT Transistors
RoHS	Details
Series	TRENCHSTOP
Technology	Si
Tradename	TRENCHSTOP
Unit Weight	0.211644 oz
Width	4.4 mm
Case	TO220-3
Collector current	20A
Collector-emitter voltage	600V
Features of semiconductor devices	integrated anti-parallel diode
Gate charge	0.12µC
Gate-emitter voltage	±20V
Kind of package	tube
Mounting	THT
Power dissipation	166W
Pulsed collector current	60A
Semiconductor structure	single transistor
Turn-off time	299ns
Turn-on time	36ns
Type of transistor	IGBT
Channel Type	N
Energy Rating	0.77mJ
Maximum Collector Emitter Voltage	600 V
Maximum Continuous Collector Current	41 A
Maximum Power Dissipation	166 W
Mounting Type	Through Hole
Number of Transistors	1
Package Type	TO-220
Pin Count	3
Transistor Configuration	Single
Вид	IGBT
Тип	БТИЗ
Вес, г	1.8