IKW40N120CS7XKSA1, IGBTs Y
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
8 900 ֏
от 25 шт. —
7 000 ֏
от 100 шт. —
5 900 ֏
от 240 шт. —
5 200 ֏
1 шт.
на сумму 8 900 ֏
Описание
Unclassified
The Infineon's 40 A TRENCHSTOP IGBT7 S7 discrete comes in TO-247 package with EC7 diode inside. It offers low VCEsat to achieve very low conduction losses in target applications and the co-packed very soft and fast emitter controlled diode helps to minimize switching losses contributing to overall low total losses.
Технические параметры
| Channel Type | N |
| Configuration | Single |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 40 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 357 W |
| Mounting Type | Through Hole |
| Number of Transistors | 1 |
| Package Type | TO-247-3 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 2040 КБ
