IPP051N15N5AKSA1, Микросхема
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Описание
This Infineon OptiMOS MOSFET offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
Технические параметры
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 500 |
| Fall Time: | 37 ns |
| Forward Transconductance - Min: | 59 S |
| Id - Continuous Drain Current: | 120 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Part # Aliases: | IPP051N15N5 SP001279600 |
| Pd - Power Dissipation: | 300 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 80 nC |
| Rds On - Drain-Source Resistance: | 5.1 mOhms |
| Rise Time: | 5.3 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 4.5 ns |
| Typical Turn-On Delay Time: | 19.6 ns |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 2.8 |
Техническая документация
Datasheet
pdf, 1587 КБ
Datasheet IPP051N15N5AKSA1
pdf, 1638 КБ
