N-Channel MOSFET, 69 A, 100 V, 3-Pin TO-220 IPP12CN10LGXKSA1
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1 320 ֏
Кратность заказа 5 шт.
5 шт.
на сумму 6 600 ֏
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group.
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Forward Diode Voltage | 1.2V |
Maximum Continuous Drain Current | 69 A |
Maximum Drain Source Resistance | 15.8 mΩ |
Maximum Drain Source Voltage | 100 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 2.4V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 125 W |
Minimum Gate Threshold Voltage | 1.2V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-220 |
Pin Count | 3 |
Series | OptiMOS 2 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 58 nC @ 10 V |
Width | 4.57mm |
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 500 |
Fall Time: | 5 ns |
Forward Transconductance - Min: | 57 S |
Id - Continuous Drain Current: | 69 A |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package/Case: | TO-220-3 |
Packaging: | Tube |
Part # Aliases: | IPP12CN10L G SP000680864 |
Pd - Power Dissipation: | 125 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 58 nC |
Rds On - Drain-Source Resistance: | 9.9 mOhms |
Rise Time: | 9 ns |
Series: | OptiMOS 2 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | OptiMOS |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 39 ns |
Typical Turn-On Delay Time: | 14 ns |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
Вес, г | 13 |