IRF740LCPBF, Транзистор
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 150 ֏
1 шт.
на сумму 1 150 ֏
Описание
МОП-транзистор 400V N-CH HEXFET
Технические параметры
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
Product Category | Power MOSFET |
Process Technology | HEXFET |
Configuration | Single |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 400 |
Maximum Gate Source Voltage (V) | ±30 |
Maximum Continuous Drain Current (A) | 10 |
Maximum Drain Source Resistance (mOhm) | 550@10V |
Typical Gate Charge @ Vgs (nC) | 39(Max)@10V |
Typical Gate Charge @ 10V (nC) | 39(Max) |
Typical Input Capacitance @ Vds (pF) | 1100@25V |
Maximum Power Dissipation (mW) | 125000 |
Typical Fall Time (ns) | 20 |
Typical Rise Time (ns) | 31 |
Typical Turn-Off Delay Time (ns) | 25 |
Typical Turn-On Delay Time (ns) | 11 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Automotive | No |
Pin Count | 3 |
Supplier Package | TO-220AB |
Standard Package Name | TO-220 |
Military | No |
Mounting | Through Hole |
Package Height | 9.01(Max) |
Package Length | 10.41(Max) |
Package Width | 4.7(Max) |
PCB changed | 3 |
Tab | Tab |
Lead Shape | Through Hole |
Вес, г | 2 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 267 КБ
Datasheet
pdf, 147 КБ
Datasheet IRF740LCPBF
pdf, 271 КБ
Документация
pdf, 270 КБ