IXGH6N170 IGBT, 6 A 1700 V, 3-Pin TO-247AD, Through Hole
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
21 900 ֏
1 шт.
на сумму 21 900 ֏
Описание
Semiconductors\Discrete Semiconductors\IGBTs
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching.
Технические параметры
Channel Type | N |
Maximum Collector Emitter Voltage | 1700 V |
Maximum Continuous Collector Current | 6 A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |
Mounting Type | Through Hole |
Package Type | TO-247AD |
Pin Count | 3 |
Transistor Configuration | Single |
Вес, г | 6 |