N-Channel MOSFET, 75 A, 100 V, 3-Pin TO-220 IXTP75N10P
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS A wide range of advanced discrete Power MOSFET devices from IXYSundefined
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 75 A |
| Maximum Drain Source Resistance | 25 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 5.5V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 360 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Series | HiperFET, Polar |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 74 nC @ 10 V |
| Вес, г | 193.5 |
