IXXH110N65C4, БТИЗ транзистор, 235 А, 2.06 В, 880 Вт, 650 В, TO-247AD, 3 вывод(-ов)
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Описание
Полупроводники - Дискретные\IGBTs\БТИЗ Одиночные
IGBT PT 650V 234A 880W Through Hole TO-247 (IXXH)
Технические параметры
| Base Product Number | 110N65 -> |
| California Prop 65 | Warning Information |
| Current - Collector (Ic) (Max) | 234A |
| Current - Collector Pulsed (Icm) | 600A |
| ECCN | EAR99 |
| Gate Charge | 180nC |
| HTSUS | 8541.29.0095 |
| IGBT Type | PT |
| Input Type | Standard |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-3 |
| Power - Max | 880W |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | GenX4в„ў, XPTв„ў -> |
| Supplier Device Package | TO-247 (IXXH) |
| Switching Energy | 2.3mJ (on), 600ВµJ (off) |
| Td (on/off) @ 25В°C | 35ns/143ns |
| Test Condition | 400V, 55A, 2Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 110A |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Case | TO247-3 |
| Collector current | 110A |
| Collector-emitter voltage | 650V |
| Gate-emitter voltage | ±20V |
| Kind of package | tube |
| Manufacturer | IXYS |
| Mounting | THT |
| Power dissipation | 880W |
| Pulsed collector current | 600A |
| Technology | GenX4™, Trench, XPT™ |
| Turn-off time | 160ns |
| Turn-on time | 71ns |
| Type of transistor | IGBT |
| Вес, г | 4 |
Техническая документация
Datasheet
pdf, 172 КБ
Datasheet IXXH110N65C4
pdf, 171 КБ
