MMBFJ175LT1G, Транзистор P-JFET 25В 0.225Вт [SOT-23-3]
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см. техническую документацию
см. техническую документацию
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154 ֏
от 100 шт. —
141 ֏
1 шт.
на сумму 154 ֏
Описание
TRANSISTOR, JFET, P, 30V, SOT-23; Breakdown Voltage Vbr:30V; Zero Gate Voltage Drain Current Idss Min:7mA; Zero Gate Voltage Drain Current Idss Max:60mA; Gate-Source Cutoff Voltage Vgs(off) Max:6V; Transistor Case Style:SOT-23; Transistor Type:JFET; No. of Pins:3 Pin; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Capacitance Ciss Max:11pF; Current Idss Max:60mA; Current Idss Min:7mA; Drain Source Voltage Vds:-30V; No. of Pins:3Pins; On State Resistance Max:125ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Pd:225mW; Power Dissipation Ptot Max:225mW; SMD Marking:6W; Termination Type:Surface Mount Device; Transistor Polarity:P Channel; Voltage Vgs Off Min:3V
Технические параметры
Channel Type | P |
Configuration | Single |
Drain Gate On-Capacitance | 11pF |
Idss Drain-Source Cut-off Current | -7 to-60mA |
Maximum Drain Gate Voltage | -25V |
Maximum Drain Source Resistance | 125 Ω |
Maximum Drain Source Voltage | 15 V |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Package Type | SOT-23 |
Pin Count | 3 |
Source Gate On-Capacitance | 11pF |
Transistor Configuration | Single |
Width | 1.4mm |
Вес, г | 0.1 |