MMBT2222A-7-F, Биполярный транзистор, NPN, 40 В, 600 мА, 300 мВт, SOT-23, Surface Mount

Фото 1/7 MMBT2222A-7-F, Биполярный транзистор, NPN, 40 В, 600 мА, 300 мВт, SOT-23, Surface Mount
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163 ֏
Мин. кол-во для заказа 70 шт.
Кратность заказа 5 шт.
от 100 шт.84 ֏
70 шт. на сумму 11 410 ֏
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Номенклатурный номер: 8141567449
Бренд: DIODES INC.

Описание

Описание Транзистор NPN, биполярный, 40В, 600мА, 310мВт, SOT23 Характеристики
Категория Транзистор
Тип биполярный
Вид NPN

Технические параметры

EU RoHS Compliant
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.95
Type NPN
Product Category Bipolar Small Signal
Configuration Single
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 75
Maximum Collector-Emitter Voltage (V) 40
Maximum Emitter Base Voltage (V) 6
Maximum Base Emitter Saturation Voltage (V) 2@50mA@500mA|1.2@15mA@150mA
Maximum Collector-Emitter Saturation Voltage (V) 0.3@15mA@150mA|1@50mA@500mA
Maximum DC Collector Current (A) 0.6
Maximum Collector Cut-Off Current (nA) 10
Minimum DC Current Gain 50@1mA@10V|75@10mA@10V|35@0.1mA@10V|35@150mA@1V|100@150mA@10V|40@500mA@10V
Maximum Power Dissipation (mW) 350
Maximum Transition Frequency (MHz) 300(Min)
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Automotive
Packaging Tape and Reel
Automotive Yes
AEC Qualified Number AEC-Q101
Pin Count 3
Supplier Package SOT-23
Standard Package Name SOT-23
Military No
Mounting Surface Mount
Package Height 0.98
Package Length 2.9
Package Width 1.3
PCB changed 3
Lead Shape Gull-wing
Maximum Collector Base Voltage 75 V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 600 mA
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 300 mW
Mounting Type Surface Mount
Package Type SOT-23
Transistor Configuration Single
Transistor Type NPN
Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 75 V
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 1 V
Configuration: Single
Continuous Collector Current: 600 mA
DC Current Gain hFE Max: 300
Emitter- Base Voltage VEBO: 6 V
Factory Pack Quantity: Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 300 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 600 mA
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Pd - Power Dissipation: 310 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: MMBT2222
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN
Вес, г 0.05

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet
pdf, 128 КБ
Datasheet
pdf, 421 КБ
Datasheet MMBT2222A-7-F
pdf, 222 КБ