OP132, Infrared Emitter, Hermetic, 935 nm, 18 °, TO-46, 1 µs, 500 ns
![OP132, Infrared Emitter, Hermetic, 935 nm, 18 °, TO-46, 1 µs, 500 ns](https://static.chipdip.ru/lib/202/DOC047202881.jpg)
см. техническую документацию
Описание
The OP132 is a 935nm gallium arsenide (GaAs) Infrared LED mounted in a hermetically sealed package that provides an enhanced temperature range with a variety of power ranges. The housing also offers high power dissipation and superior protection for hostile environments. The device has a narrow beam with an inclusive angle at half power points of 18°. It has a broad irradiance pattern of 50° at half power points, providing relatively even illumination over a large area. This device is designed to efficiently operate with OP800, OP593, OP598 and OP599 phototransistors or the OP830 photo Darlington. It is suitable for use in non-contact reflective object sensor, assembly line automation, machine automation, machine safety, end of travel sensor.
• Focused and non-focused optical light pattern
• Mechanically and spectrally matched to other OPTEK devices
Технические параметры
Angle of Half Intensity | 18° |
Diode Case Style | TO-46 |
Fall Time tf | 500ns |
Forward Current If(AV) | 100mA |
Forward Voltage VF Max | 1.75V |
Operating Temperature Max | 125°C |
Operating Temperature Min | -65°C |
Peak Wavelength | 935nm |
Rise Time | 1µs |
Вес, г | 0.38 |
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 11 сентября1 | бесплатно |
HayPost | 15 сентября1 | 1 650 ֏2 |