SI2387DS-T1-GE3, Силовой МОП-транзистор, P Канал, 80 В, 3 А, 0.137 Ом, SOT-23, Surface Mount
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540 ֏
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Кратность заказа 5 шт.
от 100 шт. —
285 ֏
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Описание
Полупроводники - Дискретные\МОП-транзисторы\Одиночные МОП-транзисторы
The Vishay TrenchFET Gen IV P-Channel power MOSFET is use for load switch, circuit protection and motor drive control.
Технические параметры
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 30 ns |
| Id - Continuous Drain Current: | 3 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOT-23-3 |
| Pd - Power Dissipation: | 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 10.2 nC |
| Rds On - Drain-Source Resistance: | 242 mOhms |
| Rise Time: | 40 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 44 ns |
| Typical Turn-On Delay Time: | 50 ns |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 3 A |
| Maximum Drain Source Resistance | 11 Ω |
| Maximum Drain Source Voltage | 80 V |
| Maximum Gate Threshold Voltage | 2.5V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Series | TrenchFET |
| Transistor Material | Si |
| Вес, г | 1 |
