SI4136DY-T1-GE3, Силовой МОП-транзистор, N Канал, 20 В, 46 А, 0.00155 Ом, SOIC, Surface Mount
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 780 ֏
Мин. кол-во для заказа 7 шт.
от 10 шт. —
1 600 ֏
Добавить в корзину 7 шт.
на сумму 12 460 ֏
Описание
Si4 TrenchFET® Power MOSFETs Vishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different VGS and VDS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% Rg and UIS tested.
Технические параметры
Brand: | Vishay Semiconductors |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: | 2500 |
Id - Continuous Drain Current: | 46 A |
Manufacturer: | Vishay |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | SOIC-8 |
Part # Aliases: | SI4136DY-GE3 |
Pd - Power Dissipation: | 7.8 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 110 nC |
Rds On - Drain-Source Resistance: | 2 mOhms |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Вес, г | 1 |
Техническая документация
Datasheet
pdf, 104 КБ
Трёхмерное изображение изделия
zip, 61 КБ