ZTX751, Транзистор [TO-92]
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см. техническую документацию
см. техническую документацию
146 ֏
от 5 шт. —
143 ֏
1 шт.
на сумму 146 ֏
Описание
HIGH GAIN TRANSISTOR, PNP, -60V, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:-60V, Transition Frequency ft:140MHz, Power Dissipation Pd:1W, DC Collector Current:-2A, DC Current Gain hFE:200hFE, No. of Pins:3Pins , RoHS Compliant: Yes
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 80 V |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Collector-Emitter Saturation Voltage: | 280 mV |
| Configuration: | Single |
| Continuous Collector Current: | -2 A |
| Emitter- Base Voltage VEBO: | 7 V |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Gain Bandwidth Product fT: | 140 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 2 A |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 1 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | ZTX751 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Вес, г | 0.4536 |
