TK62J60W,S1VQ, Trans MOSFET N-CH Si 600V 61.8A 3-Pin(3+Tab) TO-3PN
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
23 шт., срок 7-9 недель
8 800 ֏
Мин. кол-во для заказа 16 шт.
Добавить в корзину 16 шт.
на сумму 140 800 ֏
Описание
Diodes, Transistors and Thyristors\FET Transistors\MOSFETs
Trans MOSFET N-CH Si 600 В 61,8 А 3-контактный (3 вкладки) TO-3PN
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Material | Si |
| Maximum Continuous Drain Current (A) | 61.8 |
| Maximum Drain Source Resistance (mOhm) | 40 10V |
| Maximum Drain Source Voltage (V) | 600 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 3.7 |
| Maximum IDSS (uA) | 10 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 400000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | DTMOSIV |
| Product Category | Power MOSFET |
| Standard Package Name | TO-3PN |
| Supplier Package | TO-3PN |
| Tab | Tab |
| Typical Fall Time (ns) | 15 |
| Typical Gate Charge @ 10V (nC) | 180 |
| Typical Gate Charge @ Vgs (nC) | 180 10V |
| Typical Input Capacitance @ Vds (pF) | 6500 300V |
| Typical Rise Time (ns) | 58 |
| Base Product Number | TC74VHCT244 -> |
| Current - Continuous Drain (Id) @ 25В°C | 61.8A (Ta) |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Feature | Super Junction |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 6500pF @ 300V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | 150В°C (TJ) |
| Package | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Power Dissipation (Max) | 400W (Tc) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 30.9A, 10V |
| RoHS Status | RoHS Compliant |
| Series | DTMOSIV -> |
| Supplier Device Package | TO-3P(N) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 3.7V @ 3.1mA |
| Вес, г | 1 |
Техническая документация
Datasheet TK62J60W,S1VQ
pdf, 252 КБ
Datasheet TK62J60W,S1VQ
pdf, 240 КБ
Datasheet TK62J60W,S1VQ
pdf, 252 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 23 августа1 | бесплатно |
| HayPost | 27 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
