IRFR024PBF, Trans MOSFET N-CH 60V 14A 3-Pin(2+Tab) DPAK
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Описание
Diodes, Transistors and Thyristors\FET Transistors\MOSFETs
Описание Транзистор: N-MOSFET, полевой, 60В, 9А, 42Вт, DPAK Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 14 |
Maximum Diode Forward Voltage (V) | 1.5 |
Maximum Drain Source Resistance (mOhm) | 100 10V |
Maximum Drain Source Voltage (V) | 60 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum IDSS (uA) | 25 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
Maximum Operating Temperature (°C) | 150 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Power Dissipation (mW) | 2500 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.5 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 56 |
Minimum Gate Threshold Voltage (V) | 2 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Operating Junction Temperature (°C) | -55 to 150 |
Part Status | Active |
PCB changed | 2 |
Pin Count | 3 |
PPAP | No |
Process Technology | HEXFET |
Product Category | Power MOSFET |
Standard Package Name | TO-252 |
Supplier Package | DPAK |
Tab | Tab |
Typical Fall Time (ns) | 42 |
Typical Gate Charge @ 10V (nC) | 25(Max) |
Typical Gate Charge @ Vgs (nC) | 25(Max)10V |
Typical Gate Plateau Voltage (V) | 6.1 |
Typical Gate to Drain Charge (nC) | 11(Max) |
Typical Gate to Source Charge (nC) | 5.8(Max) |
Typical Input Capacitance @ Vds (pF) | 640 25V |
Typical Output Capacitance (pF) | 360 |
Typical Reverse Recovery Charge (nC) | 290 |
Typical Reverse Recovery Time (ns) | 88 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 79 25V |
Typical Rise Time (ns) | 58 |
Typical Turn-Off Delay Time (ns) | 25 |
Typical Turn-On Delay Time (ns) | 13 |
Maximum Continuous Drain Current - (A) | 14 |
Maximum Drain Source Resistance - (mOhm) | 100@10V |
Maximum Drain Source Voltage - (V) | 60 |
Maximum Gate Source Voltage - (V) | ??20 |
Maximum Gate Threshold Voltage - (V) | 4 |
Maximum Power Dissipation - (mW) | 2500 |
Military | No |
Operating Temperature - (??C) | -55~150 |
Packaging | Tape and Reel |
Typical Gate Charge @ 10V - (nC) | 25(Max) |
Typical Gate Charge @ Vgs - (nC) | 25(Max)@10V |
Typical Input Capacitance @ Vds - (pF) | 640@25V |
Typical Output Capacitance - (pF) | 360 |
Maximum Continuous Drain Current | 14 A |
Maximum Drain Source Voltage | 60 V |
Mounting Type | Surface Mount |
Package Type | DPAK(TO-252) |
Вес, г | 1 |
Техническая документация
Datasheet
pdf, 1060 КБ
Документация
pdf, 1060 КБ