MMBT3906T-7-F, Trans GP BJT PNP 40V 0.2A 150mW 3-Pin SOT-523 T/R
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см. техническую документацию
см. техническую документацию
27 ֏
Мин. кол-во для заказа 6000 шт.
Кратность заказа 3000 шт.
6000 шт.
на сумму 162 000 ֏
Описание
Diodes, Transistors and Thyristors\Bipolar Transistors\GP BJT
Trans GP BJT PNP 40V 0.2A 150mW 3-Pin SOT-523 T/R
Технические параметры
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Base Emitter Saturation Voltage (V) | 0.85 1mA 10mA|0.95 5mA 50mA |
| Maximum Collector Base Voltage (V) | 40 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25 1mA 10mA|0.4 5mA 50mA |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum DC Collector Current (A) | 0.2 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 150 |
| Maximum Transition Frequency (MHz) | 250(Min) |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Bipolar Small Signal |
| Standard Package Name | SOT |
| Supplier Package | SOT-523 |
| Type | PNP |
| Maximum Collector Base Voltage | -40 V |
| Maximum Collector Emitter Voltage | 40 V |
| Maximum DC Collector Current | 200 mA |
| Maximum Emitter Base Voltage | -5 V |
| Maximum Operating Frequency | 250 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 150 mW |
| Minimum DC Current Gain | 100 |
| Mounting Type | Surface Mount |
| Package Type | SOT-523(SC-89) |
| Transistor Configuration | Single |
| Transistor Type | PNP |
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 40 V |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector-Emitter Saturation Voltage: | 400 mV |
| Configuration: | Single |
| Continuous Collector Current: | -200 mA |
| DC Current Gain hFE Max: | 300 |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 140 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 200 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-523-3 |
| Pd - Power Dissipation: | 150 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | MMBT39 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Collector Current (Ic) | 200mA |
| Collector Cut-Off Current (Icbo) | 50nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 40V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 400mV@50mA, 5mA |
| DC Current Gain (hFE@Ic,Vce) | 100@10mA, 1V |
| Power Dissipation (Pd) | 150mW |
| Transition Frequency (fT) | 250MHz |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 172 КБ
Datasheet MMBT3906T-7
pdf, 422 КБ
Datasheet MMBT3906T-7-F
pdf, 402 КБ
