DZT5401-13, Trans GP BJT PNP 150V 0.6A 1000mW 4-Pin(3+Tab) SOT-223 T/R

Фото 1/4 DZT5401-13, Trans GP BJT PNP 150V 0.6A 1000mW 4-Pin(3+Tab) SOT-223 T/R
Изображения служат только для ознакомления,
см. техническую документацию
128 ֏
Кратность заказа 2500 шт.
2500 шт. на сумму 320 000 ֏
Номенклатурный номер: 8001121633
Бренд: DIODES INC.

Технические параметры

EU RoHS Compliant
ECCN (US) EAR99
Part Status Active
HTS 8541.21.00.95
Type PNP
Product Category Bipolar Power
Configuration Single Dual Collector
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 160
Maximum Collector-Emitter Voltage (V) 150
Maximum Emitter Base Voltage (V) 5
Maximum Base Emitter Saturation Voltage (V) 1@5mA@50mA|1@1mA@10mA
Maximum Collector-Emitter Saturation Voltage (V) 0.5@5mA@50mA|0.2@1mA@10mA
Maximum DC Collector Current (A) 0.6
Minimum DC Current Gain 50@50mA@5V|60@10mA@5V|50@1mA@5V
Maximum Power Dissipation (mW) 1000
Maximum Transition Frequency (MHz) 300
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Automotive Yes
AEC Qualified Number AEC-Q101
Standard Package Name SOT-223
Supplier Package SOT-223
Pin Count 4
Military No
Mounting Surface Mount
Package Height 1.6
Package Length 6.5
Package Width 3.5
PCB changed 3
Tab Tab
Lead Shape Gull-wing
Brand Diodes Incorporated
Collector- Base Voltage VCBO -160 V
Collector- Emitter Voltage VCEO Max -150 V
Collector-Emitter Saturation Voltage -500 mV
DC Collector/Base Gain Hfe Min 50 at-1 mA, -5 V
Emitter- Base Voltage VEBO -5 V
Factory Pack Quantity 2500
Gain Bandwidth Product FT 300 MHz
Manufacturer Diodes Incorporated
Maximum DC Collector Current -600 mA
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Package / Case SOT-223-4
Pd - Power Dissipation 1000 mW
Product Type BJTs-Bipolar Transistors
Series DZT5401
Subcategory Transistors
Transistor Polarity PNP
Collector Emitter Voltage Max 150В
Continuous Collector Current 600мА
DC Current Gain hFE Min 50hFE
DC Усиление Тока hFE 50hFE
Power Dissipation 1Вт
Квалификация -
Количество Выводов 3вывод(-ов)
Линейка Продукции DZT Series
Максимальная Рабочая Температура 150°C
Монтаж транзистора Surface Mount
Полярность Транзистора PNP
Стиль Корпуса Транзистора SOT-223
Частота Перехода ft 300МГц
Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 160 V
Collector- Emitter Voltage VCEO Max: 150 V
Collector-Emitter Saturation Voltage: 500 mV
Configuration: Single
DC Collector/Base Gain hfe Min: 50 at-1 mA, -5 V
Emitter- Base Voltage VEBO: 6 V
Factory Pack Quantity: Factory Pack Quantity: 2500
Gain Bandwidth Product fT: 300 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 600 mA
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: SOT-223-4
Pd - Power Dissipation: 1 W
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: DZT5401
Subcategory: Transistors
Technology: Si
Transistor Polarity: PNP
Вес, г 0.112

Техническая документация

Datasheet
pdf, 420 КБ
Datasheet DZT5401-13
pdf, 133 КБ
Datasheet DZT5401-13
pdf, 420 КБ