SI4654DY-T1-GE3, Trans MOSFET N-CH 25V 28.6A 8-Pin SOIC N T/R
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см. техническую документацию
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Технические параметры
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Obsolete |
| HTS | 8541.29.00.95 |
| Product Category | Power MOSFET |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 25 |
| Maximum Gate Source Voltage (V) | ±16 |
| Maximum Continuous Drain Current (A) | 28.6 |
| Maximum Drain Source Resistance (mOhm) | 4@10V |
| Typical Gate Charge @ Vgs (nC) | 63@10V|29@4.5V |
| Typical Gate Charge @ 10V (nC) | 63 |
| Typical Input Capacitance @ Vds (pF) | 3770@15V |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 10 |
| Typical Turn-Off Delay Time (ns) | 50 |
| Typical Turn-On Delay Time (ns) | 30 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Automotive | No |
| Standard Package Name | SOP |
| Pin Count | 8 |
| Supplier Package | SOIC N |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 1.55(Max) |
| Package Length | 5(Max) |
| Package Width | 4(Max) |
| PCB changed | 8 |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
Техническая документация
Datasheet SI4654DY-T1-GE3
pdf, 174 КБ
