IRFR430APBF, Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) DPAK
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
940 ֏
Мин. кол-во для заказа 150 шт.
Добавить в корзину 150 шт.
на сумму 141 000 ֏
Альтернативные предложения1
Описание
Diodes, Transistors and Thyristors\FET Transistors\MOSFETs
Описание Транзистор N-MOSFET, полевой, 500В, 3,2А, 110Вт, DPAK Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
Maximum Continuous Drain Current (A) | 5 |
Maximum Drain Source Resistance (mOhm) | 1700@10V |
Maximum Drain Source Voltage (V) | 500 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±30 |
Maximum Gate Threshold Voltage (V) | 4.5 |
Maximum IDSS (uA) | 25 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 110000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Part Status | Active |
PCB changed | 2 |
Pin Count | 3 |
PPAP | No |
Product Category | Power MOSFET |
Standard Package Name | TO-252 |
Supplier Package | DPAK |
Tab | Tab |
Typical Fall Time (ns) | 16 |
Typical Gate Charge @ 10V (nC) | 24(Max) |
Typical Gate Charge @ Vgs (nC) | 24(Max)@10V |
Typical Input Capacitance @ Vds (pF) | 750@1V |
Typical Rise Time (ns) | 27 |
Typical Turn-Off Delay Time (ns) | 17 |
Typical Turn-On Delay Time (ns) | 8.7 |
Brand | Vishay Semiconductors |
Factory Pack Quantity | 2000 |
Fall Time | 16 ns |
Height | 2.39 mm |
Id - Continuous Drain Current | 5 A |
Length | 6.73 mm |
Manufacturer | Vishay |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TO-252AA-3 |
Packaging | Reel |
Pd - Power Dissipation | 110 W |
Rds On - Drain-Source Resistance | 1.7 Ohms |
Rise Time | 27 ns |
RoHS | Details |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 17 ns |
Typical Turn-On Delay Time | 8.7 ns |
Unit Weight | 0.050717 oz |
Vds - Drain-Source Breakdown Voltage | 500 V |
Vgs - Gate-Source Voltage | 30 V |
Width | 6.22 mm |
Case | DPAK, TO252 |
Drain current | 3.2A |
Drain-source voltage | 500V |
Gate charge | 24nC |
Gate-source voltage | ±30V |
Kind of channel | enhanced |
Kind of package | tube |
On-state resistance | 1.7Ω |
Polarisation | unipolar |
Power dissipation | 110W |
Type of transistor | N-MOSFET |
Вес, г | 1 |