SI3460DDV-T1-GE3, Trans MOSFET N-CH 20V 7.9A 6-Pin TSOP T/R
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152 ֏
Кратность заказа 3000 шт.
Добавить в корзину 3000 шт.
на сумму 456 000 ֏
Описание
Diodes, Transistors and Thyristors\FET Transistors\MOSFETs
Trans MOSFET N-CH 20V 7.9A 6-Pin TSOP T/R
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain |
| ECCN (US) | EAR99 |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 7.9 |
| Maximum Drain Source Resistance (mOhm) | 28@4.5V |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Voltage (V) | ±8 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1700 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 6 |
| Pin Count | 6 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | SO |
| Supplier Package | TSOP |
| Typical Fall Time (ns) | 8 |
| Typical Gate Charge @ Vgs (nC) | 12@8V|6.7@4.5V |
| Typical Input Capacitance @ Vds (pF) | 666@10V |
| Typical Rise Time (ns) | 11|12 |
| Typical Turn-Off Delay Time (ns) | 21|19 |
| Typical Turn-On Delay Time (ns) | 6|5 |
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 8 ns |
| Id - Continuous Drain Current: | 7.9 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TSOP-6 |
| Part # Aliases: | SI3460DDV-T1-BE3 SI3460DDV-GE3 |
| Pd - Power Dissipation: | 2.7 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 18 nC |
| Rds On - Drain-Source Resistance: | 28 mOhms |
| Rise Time: | 12 ns |
| Series: | SI3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 21 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Maximum Continuous Drain Current | 7.9 A |
| Maximum Drain Source Voltage | 20 V |
| Mounting Type | Surface Mount |
| Package Type | TSOP-6 |
| Вес, г | 1 |
