UMC4N-7, Биполярный транзистор
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см. техническую документацию
см. техническую документацию
110 ֏
от 200 шт. —
27 ֏
от 400 шт. —
25 ֏
1 шт.
на сумму 110 ֏
Технические параметры
| Brand | Diodes Incorporated |
| Configuration | Dual Common Base and Collector |
| Continuous Collector Current | 30 mA, 100 mA |
| DC Collector/Base Gain Hfe Min | 68 |
| Factory Pack Quantity | 3000 |
| Height | 1 mm |
| Length | 2.2 mm |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | SMD/SMT |
| Number Of Channels | 2 Channel |
| Package / Case | SOT-353-5 |
| Packaging | Cut Tape or Reel |
| Peak DC Collector Current | 30 mA |
| Product Category | Bipolar Transistors - Pre-Biased |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Series | UMC4N |
| Subcategory | Transistors |
| Transistor Polarity | NPN, PNP |
| Typical Input Resistor | 47 kOhms |
| Typical Resistor Ratio | 1, 0.212 |
| Unit Weight | 0.000212 oz |
| Width | 1.35 mm |
| Вес, г | 0.04 |
Техническая документация
Datasheet UMC4N-7
pdf, 401 КБ
