IPT004N03L
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см. техническую документацию
см. техническую документацию
8 700 ֏
1 шт.
на сумму 8 700 ֏
Описание
Электроэлемент
HSOF-8 MOSFETs ROHS
Технические параметры
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |
| Fall Time: | 37 ns |
| Forward Transconductance - Min: | 160 S |
| Id - Continuous Drain Current: | 300 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | HSOF-8 |
| Part # Aliases: | SP001100156 IPT004N03LATMA1 |
| Pd - Power Dissipation: | 300 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 122 nC |
| Rds On - Drain-Source Resistance: | 400 uOhms |
| Rise Time: | 17 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 149 ns |
| Typical Turn-On Delay Time: | 30 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 700 mV |
| Вес, г | 1.34 |
Техническая документация
Datasheet
pdf, 1196 КБ
