HN1B01F-GR(TE85L.F)

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85 шт. с центрального склада, срок 3 недели

1 810 ֏

1 шт. на сумму 1 810 ֏

Альтернативные предложения1

Номенклатурный номер: 8001939853

Бренд: Toshiba

Электроэлемент

Trans GP BJT NPN/PNP 50V 0.15A 6-Pin SM T/R

Category	Bipolar Small Signal
Collector Current (DC)	0.15 A
Collector-Base Voltage	60 V
Collector-Emitter Voltage	50 V
DC Current Gain	200
Emitter-Base Voltage	5 V
Frequency	150 MHz
Mounting	Surface Mount
Number of Elements	2
Operating Temp Range	-55C to 125C
Operating Temperature Classification	Military
Package Type	SM
Packaging	Tape and Reel
Pin Count	6
Power Dissipation	0.3 W
Rad Hardened	No
Transistor Polarity	NPN/PNP
Brand:	Toshiba
Collector- Base Voltage VCBO:	60 V, 50 V
Collector- Emitter Voltage VCEO Max:	50 V
Collector-Emitter Saturation Voltage:	100 mV
Configuration:	Dual
DC Collector/Base Gain hFE Min:	120
DC Current Gain hFE Max:	400
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	150 MHz, 120 MHz
Manufacturer:	Toshiba
Maximum DC Collector Current:	150 mA
Maximum Operating Temperature:	+125 C
Mounting Style:	SMD/SMT
Package/Case:	SM-6
Pd - Power Dissipation:	300 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN, PNP
Вес, г	1