TK7A90E.S4X

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7 шт. с центрального склада, срок 3 недели

3 130 ֏

1 шт. на сумму 3 130 ֏

Альтернативные предложения1

Номенклатурный номер: 8001939855

Бренд: Toshiba

Электроэлемент

Trans MOSFET N-CH Si 900V 7A 3-Pin(3+Tab) TO-220SIS Tube

Channel Mode	Enhancement
Continuous Drain Current	7(A)
Drain-Source On-Volt	900(V)
Gate-Source Voltage (Max)	'±30(V)
Mounting	Through Hole
Number of Elements	1
Operating Temp Range	-55C to 150C
Operating Temperature Classification	Military
Package Type	TO-220SIS
Packaging	Rail/Tube
Pin Count	3+Tab
Polarity	N
Power Dissipation	45(W)
Rad Hardened	No
Type	Power MOSFET
Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	50
Fall Time:	15 ns
Id - Continuous Drain Current:	7 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	45 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	32 nC
Rds On - Drain-Source Resistance:	1.6 Ohms
Rise Time:	20 ns
Series:	TK7A90E
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MOSVIII
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	85 ns
Typical Turn-On Delay Time:	55 ns
Vds - Drain-Source Breakdown Voltage:	900 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Вес, г	1.95