BSC070N10NS5ATMA1
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см. техническую документацию
см. техническую документацию
2 420 ֏
1 шт.
на сумму 2 420 ֏
Описание
Электроэлемент
MOSFET, N-CH, 100V, 80A, TDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:80A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.006ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipation , RoHS Compliant: Yes
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 5000 |
| Fall Time | 6 ns |
| Forward Transconductance - Min | 38 S |
| Height | 1.27 mm |
| Id - Continuous Drain Current | 80 A |
| Length | 5.9 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TDSON-8 |
| Packaging | Reel |
| Part # Aliases | BSC070N10NS5 SP001241596 |
| Pd - Power Dissipation | 83 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 30 nC |
| Rds On - Drain-Source Resistance | 10.2 mOhms |
| Rise Time | 5 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 24 ns |
| Typical Turn-On Delay Time | 13 ns |
| Unit Weight | 0.01787 oz |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.2 V |
| Width | 5.15 mm |
| Channel Type | N Channel |
| Drain Source On State Resistance | 0.006Ом |
| Power Dissipation | 83Вт |
| Количество Выводов | 8вывод(-ов) |
| Линейка Продукции | OptiMOS 5 |
| Максимальная Рабочая Температура | 150°C |
| Монтаж транзистора | Surface Mount |
| Напряжение Измерения Rds(on) | 10В |
| Напряжение Истока-стока Vds | 100В |
| Непрерывный Ток Стока | 80А |
| Пороговое Напряжение Vgs | 3В |
| Стиль Корпуса Транзистора | TDSON |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Forward Diode Voltage | 1.1V |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Resistance | 10.2 mΩ |
| Maximum Drain Source Voltage | 80 V |
| Maximum Gate Source Voltage | 20 V |
| Maximum Gate Threshold Voltage | 3.8V |
| Maximum Power Dissipation | 83 W |
| Minimum Gate Threshold Voltage | 2.2V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | TDSON |
| Pin Count | 8 |
| Series | OptiMOS™ 5 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V |
| Вес, г | 0.5066 |
Техническая документация
Datasheet BSC070N10NS5ATMA1
pdf, 1118 КБ
