IKZ75N65EH5XKSA1
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Описание
Электроэлемент
IGBT, SINGLE, 650V, 90A, TO-247; DC Collector Current:90A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:4Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Технические параметры
Current - Collector (Ic) (Max) | 90A |
Current - Collector Pulsed (Icm) | 300A |
Gate Charge | 166nC |
IGBT Type | - |
Input Type | Standard |
Manufacturer | Infineon Technologies |
Mounting Type | Through Hole |
Operating Temperature | -40В°C ~ 175В°C(TJ) |
Package / Case | TO-247-4 |
Packaging | Tube |
Part Status | Active |
Power - Max | 395W |
Reverse Recovery Time (trr) | 58ns |
Series | TrenchStopв(ў 5 |
Standard Package | 240 |
Supplier Device Package | PG-TO247-4 |
Switching Energy | 680ВµJ(on), 430ВµJ(off) |
Td (on/off) @ 25В°C | 26ns/347ns |
Test Condition | 400V, 37.5A, 10 Ohm, 15V |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Brand: | Infineon Technologies |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.65 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 90 A |
Factory Pack Quantity: Factory Pack Quantity: | 240 |
Gate-Emitter Leakage Current: | 100 nA |
Manufacturer: | Infineon |
Maximum Gate Emitter Voltage: | -20 V, +20 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | Through Hole |
Package / Case: | TO-247-4 |
Packaging: | Tube |
Part # Aliases: | IKZ75N65EH5 SP001160046 |
Pd - Power Dissipation: | 395 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Series: | TRENCHSTOP 5 H5 |
Subcategory: | IGBTs |
Technology: | Si |
Tradename: | TRENCHSTOP |
Channel Type | N |
Maximum Collector Emitter Voltage | 650 V |
Maximum Continuous Collector Current | 75 A |
Maximum Gate Emitter Voltage | ±20 V, ±30V |
Maximum Power Dissipation | 395 W |
Number of Transistors | 1 |
Package Type | TO-247 |
Pin Count | 4 |
Вес, г | 7.077 |
Техническая документация
Datasheet IKZ75N65EH5
pdf, 2169 КБ
Datasheet IKZ75N65EH5XKSA1
pdf, 2166 КБ