IPT059N15N3

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10 100 ֏

от 2 шт. — 9 400 ֏

от 5 шт. — 8 900 ֏

от 8 шт. — 8 500 ֏

1 шт. на сумму 10 100 ֏

Номенклатурный номер: 8001944126

Электроэлемент

POWER FIELD-EFFECT TRANSISTOR, 155A I(D), 150V, 0.0059OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET

Channel Mode	Enhancement
Continuous Drain Current	155(A)
Drain-Source On-Volt	150(V)
Gate-Source Voltage (Max)	20(V)
Mounting	Surface Mount
Number of Elements	1
Operating Temp Range	-55C to 175C
Operating Temperature Classification	Military
Package Type	HSOF
Packaging	Tape and Reel
Pin Count	8+Tab
Polarity	N
Power Dissipation	375(W)
Rad Hardened	No
Type	Power MOSFET
Brand:	Infineon Technologies
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2000
Fall Time:	14 ns
Forward Transconductance - Min:	86 S
Id - Continuous Drain Current:	155 A
Manufacturer:	Infineon
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	HSOF-8
Part # Aliases:	SP001100162 IPT059N15N3ATMA1
Pd - Power Dissipation:	375 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	69 nC
Rds On - Drain-Source Resistance:	5.9 mOhms
Rise Time:	35 ns
Series:	OptiMOS 3
Subcategory:	MOSFETs
Technology:	Si
Tradename:	OptiMOS
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	46 ns
Typical Turn-On Delay Time:	25 ns
Vds - Drain-Source Breakdown Voltage:	150 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Вес, г	2.033