SQ2348ES-T1_GE3
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см. техническую документацию
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Описание
Электроэлемент
MOSFET, AEC-Q101, N-CH, 30V, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Pow
Технические параметры
| AEC Qualified Number | AEC-Q101 |
| Automotive | Yes |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Maximum Continuous Drain Current - (A) | 8 |
| Maximum Drain Source Resistance - (mOhm) | 24@10V |
| Maximum Drain Source Voltage - (V) | 30 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Gate Threshold Voltage - (V) | 2.5 |
| Maximum Power Dissipation - (mW) | 3000 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~175 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Standard Package Name | SOT-23 |
| Supplier Package | SOT-23 |
| Typical Gate Charge @ 10V - (nC) | 7.95 |
| Typical Gate Charge @ Vgs - (nC) | 7.95@10V |
| Typical Input Capacitance @ Vds - (pF) | 430@15V |
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 6 ns |
| Id - Continuous Drain Current: | 8 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | SQ2348ES-T1_BE3 |
| Pd - Power Dissipation: | 3 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 7.95 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 24 mOhms |
| Rise Time: | 8 ns |
| Series: | SQ |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 21 ns |
| Typical Turn-On Delay Time: | 4.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, г | 0.042 |
Техническая документация
Datasheet
pdf, 259 КБ
Документация
pdf, 222 КБ
