SQ2362ES-T1_GE3
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см. техническую документацию
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1 240 ֏
от 2 шт. —
840 ֏
1 шт.
на сумму 1 240 ֏
Описание
Электроэлемент
MOSFET, AEC-Q101, N-CH, 60V, 2.3A, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:2.3A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.125ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power , RoHS Compliant: Yes
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 4.3A(Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 30V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Power Dissipation (Max) | 3W(Tc) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 4.5A, 10V |
| Series | Automotive, AEC-Q101, TrenchFETВ® |
| Supplier Device Package | SOT-23-3(TO-236) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250ВµA |
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 18 ns |
| Id - Continuous Drain Current: | 4.3 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | SQ2362ES-T1_BE3 |
| Pd - Power Dissipation: | 3 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 7.6 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 68 mOhms |
| Rise Time: | 20 ns |
| Series: | SQ |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 14 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 4.3 A |
| Maximum Drain Source Resistance | 0.075 O |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Threshold Voltage | 2.5V |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Application | automotive industry |
| Case | SOT23 |
| Drain current | 4.3A |
| Drain-source voltage | 60V |
| Gate charge | 12nC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting | SMD |
| On-state resistance | 147mΩ |
| Polarisation | unipolar |
| Power dissipation | 1W |
| Pulsed drain current | 17A |
| Type of transistor | N-MOSFET |
| Вес, г | 0.065 |
Техническая документация
Datasheet
pdf, 266 КБ
Документация
pdf, 217 КБ
