BSR316PH6327XTSA1
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см. техническую документацию
см. техническую документацию
660 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
432 ֏
от 10 шт. —
352 ֏
от 26 шт. —
292 ֏
2 шт.
на сумму 1 320 ֏
Описание
Электроэлемент
Описание Транзистор P-МОП, полевой, -100В, -290мА, 500Вт, SC59, SIPMOS™
Технические параметры
Brand | Infineon Technologies |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 3000 |
Fall Time | 26 ns |
Forward Transconductance - Min | 300 mS |
Height | 1.1 mm |
Id - Continuous Drain Current | -360 mA |
Length | 3 mm |
Manufacturer | Infineon |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | SC-59-3 |
Packaging | Reel |
Part # Aliases | BSR316P H6327 SP001101034 |
Pd - Power Dissipation | 500 mW(1/2 W) |
Product | MOSFETs |
Product Category | MOSFET |
Qg - Gate Charge | 5.3 nC |
Rds On - Drain-Source Resistance | 2.2 Ohms |
Rise Time | 6 ns |
RoHS | Details |
Technology | Si |
Transistor Polarity | P-Channel |
Transistor Type | 1 P-Channel |
Type | Small Signal Transistor |
Typical Turn-Off Delay Time | 71 ns |
Typical Turn-On Delay Time | 5 ns |
Unit Weight | 0.002469 oz |
Vds - Drain-Source Breakdown Voltage | -100 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | -2 V |
Width | 1.6 mm |
Automotive Standard | AEC-Q101 |
Channel Type | P |
Forward Diode Voltage | 1.1V |
Maximum Continuous Drain Current | 360 mA |
Maximum Drain Source Resistance | 2.2 Ω |
Maximum Drain Source Voltage | 100 V |
Maximum Gate Source Voltage | 20 V |
Maximum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 500 mW |
Minimum Gate Threshold Voltage | 2V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SC-59 |
Pin Count | 3 |
Series | BSR316P |
Transistor Configuration | Single |
Typical Gate Charge @ Vgs | 5.3 nC @ 10 V |