BSR92PH6327XTSA1
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Описание
Электроэлемент
MOSFET, P-CH, -250V, -0.14A, SC-59-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-140mA; Drain Source Voltage Vds:-250V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1
Технические параметры
AEC Qualified Number | AEC-Q101 |
Automotive | Yes |
Channel Mode | Enhancement |
Channel Type | P |
Maximum Continuous Drain Current - (A) | 0.14 |
Maximum Drain Source Resistance - (mOhm) | 11000@10V |
Maximum Drain Source Voltage - (V) | 250 |
Maximum Gate Source Voltage - (V) | ??20 |
Maximum Gate Threshold Voltage - (V) | 1 |
Maximum Power Dissipation - (mW) | 500 |
Military | No |
Number of Elements per Chip | 1 |
Operating Temperature - (??C) | -55~150 |
Packaging | Tape and Reel |
Pin Count | 3 |
Process Technology | SIPMOS |
Supplier Package | SC-59 |
Typical Gate Charge @ 10V - (nC) | 3.6 |
Typical Gate Charge @ Vgs - (nC) | 3.6@10V |
Typical Input Capacitance @ Vds - (pF) | 82@25V |
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 71 ns |
Forward Transconductance - Min: | 100 mS |
Id - Continuous Drain Current: | 140 mA |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SC-59-3 |
Part # Aliases: | BSR92P H6327 SP001101038 |
Pd - Power Dissipation: | 500 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 3.6 nC |
Rds On - Drain-Source Resistance: | 11 Ohms |
Rise Time: | 6.3 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | P-Channel |
Transistor Type: | 1 P-Channel |
Typical Turn-Off Delay Time: | 75 ns |
Typical Turn-On Delay Time: | 6.4 ns |
Vds - Drain-Source Breakdown Voltage: | 250 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Automotive Standard | AEC-Q101 |
Forward Diode Voltage | 1.2V |
Maximum Continuous Drain Current | 140 mA |
Maximum Drain Source Resistance | 20 Ω |
Maximum Drain Source Voltage | 250 V |
Maximum Gate Source Voltage | 20 V |
Maximum Gate Threshold Voltage | 1V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 500 mW |
Minimum Gate Threshold Voltage | 2V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Package Type | SC-59 |
Series | SIPMOS® |
Transistor Configuration | Single |
Typical Gate Charge @ Vgs | 3.6 nC @ 10 V |
Width | 1.6mm |
Вес, г | 0.03 |
Техническая документация
Datasheet
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