IRF100S201
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см. техническую документацию
см. техническую документацию
4 360 ֏
от 2 шт. —
3 830 ֏
от 4 шт. —
3 520 ֏
1 шт.
на сумму 4 360 ֏
Описание
Электроэлемент
MOSFET, N-CH, 100V, 192A, TO-263AB, Transistor Polarity:N Channel, Continuous Drain Current Id:192A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0035ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power , RoHS Compliant: Yes
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 192A(Tc) |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 255nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 9500pF @ 50V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-263-3, DВІPak(2 Leads+Tab), TO-263AB |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 441W(Tc) |
| Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 115A, 10V |
| Series | HEXFETВ®, StrongIRFETв(ў |
| Standard Package | 1 |
| Supplier Device Package | DВІPAK(TO-263AB) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 192 |
| Maximum Diode Forward Voltage (V) | 1.3 |
| Maximum Drain Source Resistance (mOhm) | 4.2 10V |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 20 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 40 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 441000 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 690 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 175 |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | HEXFET |
| Product Category | Power MOSFET |
| Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
| Tab | Tab |
| Typical Fall Time (ns) | 100 |
| Typical Gate Charge @ 10V (nC) | 170 |
| Typical Gate Charge @ Vgs (nC) | 170 10V |
| Typical Gate Plateau Voltage (V) | 4.4 |
| Typical Gate to Drain Charge (nC) | 45 |
| Typical Gate to Source Charge (nC) | 46 |
| Typical Input Capacitance @ Vds (pF) | 9500 50V |
| Typical Output Capacitance (pF) | 660 |
| Typical Reverse Recovery Charge (nC) | 90 |
| Typical Reverse Recovery Time (ns) | 47 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 310 50V |
| Typical Rise Time (ns) | 97 |
| Typical Turn-Off Delay Time (ns) | 110 |
| Typical Turn-On Delay Time (ns) | 17 |
| Maximum Continuous Drain Current | 192 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | D2PAK(TO-263) |
| Continuous Drain Current (Id) | 192A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4.2mΩ@10V, 115A |
| Drain Source Voltage (Vdss) | 100V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Input Capacitance (Ciss@Vds) | 9.5nF@50V |
| Power Dissipation (Pd) | 441W |
| Total Gate Charge (Qg@Vgs) | 255nC@10V |
| Type | 1PCSNChannel |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 617 КБ
Datasheet IRF100B201
pdf, 621 КБ
