SQ2389ES-T1_GE3
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см. техническую документацию
см. техническую документацию
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от 5 шт. —
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от 25 шт. —
435 ֏
2 шт.
на сумму 1 680 ֏
Описание
Электроэлемент
MOSFET, AEC-Q101, N-CH, 60V, 2.3A, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:2.3A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.125ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power , RoHS Compliant: Yes
Технические параметры
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Automotive | Yes |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 4.1 |
| Maximum Drain Source Resistance (mOhm) | 94@10V |
| Maximum Drain Source Voltage (V) | 40 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 3000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | Unknown |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| Supplier Temperature Grade | Automotive |
| Typical Fall Time (ns) | 4 |
| Typical Gate Charge @ 10V (nC) | 8.2 |
| Typical Gate Charge @ Vgs (nC) | 8.2@10V |
| Typical Input Capacitance @ Vds (pF) | 360@20V |
| Typical Rise Time (ns) | 12 |
| Typical Turn-Off Delay Time (ns) | 16 |
| Typical Turn-On Delay Time (ns) | 7 |
| Application | automotive industry |
| Case | SOT23 |
| Drain current | -4.1A |
| Drain-source voltage | -40V |
| Gate charge | 12nC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | VISHAY |
| On-state resistance | 169mΩ |
| Polarisation | unipolar |
| Power dissipation | 1W |
| Pulsed drain current | -16A |
| Type of transistor | P-MOSFET |
Техническая документация
Datasheet
pdf, 222 КБ
Документация
pdf, 216 КБ
