SQ2319ADS-T1_GE3
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Описание
Электроэлемент
MOSFET, AEC-Q101, P-CH, -40V, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.6A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.068ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 4.6A(Tc) |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 620pF @ 20V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Power Dissipation (Max) | 2.5W(Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 3A, 10V |
| Series | Automotive, AEC-Q101, TrenchFETВ® |
| Supplier Device Package | SOT-23-3(TO-236) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250ВµA |
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 17 ns |
| Id - Continuous Drain Current: | 4.6 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOT-23-3 |
| Part # Aliases: | SQ2319ADS-T1_BE3 |
| Pd - Power Dissipation: | 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 10.5 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 75 mOhms |
| Rise Time: | 18 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 17 ns |
| Typical Turn-On Delay Time: | 4 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, г | 25 |
Техническая документация
Datasheet
pdf, 205 КБ
Документация
pdf, 254 КБ
