SQ2398ES-T1_GE3

SQ2398ES-T1_GE3
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см. техническую документацию
1 190 ֏
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от 10 шт.680 ֏
1 шт. на сумму 1 190 ֏
Номенклатурный номер: 8001955433

Описание

Электроэлемент
Trans MOSFET N-CH 100V 1.6A Automotive AEC-Q101 3-Pin SOT-23 T/R

Технические параметры

Current - Continuous Drain (Id) @ 25В°C 1.6A(Tc)
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 152pF @ 50V
Manufacturer Vishay Siliconix
Mounting Type Surface Mount
Operating Temperature -55В°C ~ 175В°C(TJ)
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Cut Tape(CT)
Part Status Active
Power Dissipation (Max) 2W(Tc)
Rds On (Max) @ Id, Vgs 300mOhm @ 1.5A, 10V
Series Automotive, AEC-Q101, TrenchFETВ®
Supplier Device Package SOT-23-3(TO-236)
Technology MOSFET(Metal Oxide)
Vgs (Max) В±20V
Vgs(th) (Max) @ Id 3.5V @ 250ВµA
FET Feature -
Automotive Yes
Channel Mode Enhancement
Channel Type N
Configuration Single
ECCN (US) EAR99
EU RoHS Compliant
Lead Shape Gull-wing
Maximum Continuous Drain Current (A) 1.6
Maximum Drain Source Resistance (mOhm) 300@10V
Maximum Drain Source Voltage (V) 100
Maximum Gate Source Leakage Current (nA) 100
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 3.5
Maximum IDSS (uA) 1
Maximum Operating Temperature (°C) 175
Maximum Power Dissipation (mW) 2000
Minimum Operating Temperature (°C) -55
Mounting Surface Mount
Number of Elements per Chip 1
PCB changed 3
Pin Count 3
PPAP Yes
Process Technology TrenchFET
Product Category Power MOSFET
Standard Package Name SOT
Supplier Package SOT-23
Supplier Temperature Grade Automotive
Typical Fall Time (ns) 17
Typical Gate Charge @ 10V (nC) 2.3
Typical Gate Charge @ Vgs (nC) 2.3@10V
Typical Input Capacitance @ Vds (pF) 152@50V
Typical Rise Time (ns) 18
Typical Turn-Off Delay Time (ns) 7
Typical Turn-On Delay Time (ns) 5
Вес, г 0.008

Техническая документация

Datasheet
pdf, 207 КБ
Документация
pdf, 222 КБ