IPD80R2K0P7ATMA1
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см. техническую документацию
см. техническую документацию
1 240 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
1 150 ֏
от 10 шт. —
1 000 ֏
от 100 шт. —
900 ֏
2 шт.
на сумму 2 480 ֏
Описание
Электроэлемент
MOSFET, N-CH, 800V, 3A, TO-252, Transistor Polarity:N Channel, Continuous Drain Current Id:3A, Drain Source Voltage Vds:800V, On Resistance Rds(on):1.7ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipation , RoHS Compliant: Yes
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 3A(Tc) |
| Drain to Source Voltage (Vdss) | 800V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 175pF @ 500V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 24W(Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 940mA, 10V |
| Series | CoolMOSв(ў P7 |
| Supplier Device Package | PG-TO252-3 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 50ВµA |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 3 A |
| Maximum Drain Source Resistance | 2 Ω |
| Maximum Drain Source Voltage | 800 V |
| Maximum Gate Threshold Voltage | 3.5V |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Transistor Material | Si |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Maximum Continuous Drain Current (A) | 3 |
| Maximum Drain Source Resistance (mOhm) | 2000@10V |
| Maximum Drain Source Voltage (V) | 800 |
| Maximum Gate Source Voltage (V) | 20 |
| Maximum Gate Threshold Voltage (V) | 3.5 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 24000 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 6 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| PCB changed | 2 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 20 |
| Typical Gate Charge @ 10V (nC) | 9 |
| Typical Gate Charge @ Vgs (nC) | 9@10V |
| Typical Gate to Drain Charge (nC) | 4 |
| Typical Input Capacitance @ Vds (pF) | 175@500V |
| Typical Rise Time (ns) | 8 |
| Typical Turn-Off Delay Time (ns) | 40 |
| Typical Turn-On Delay Time (ns) | 10 |
| Вес, г | 0.36 |
