IKZ50N65ES5XKSA1
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см. техническую документацию
см. техническую документацию
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Описание
Электроэлемент
Infineon IKZ50N65ES5XKSA1 P-Channel IGBT, 80 A 650 V, 4-Pin TO-247
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.35 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 80 A |
| Continuous Collector Current Ic Max: | 80 A |
| Factory Pack Quantity: | 240 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-247-4 |
| Packaging: | Tube |
| Part # Aliases: | IKZ50N65ES5 SP001636074 |
| Pd - Power Dissipation: | 274 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 7.929 |
Техническая документация
Datasheet
pdf, 1770 КБ
