IDH08G65C6XKSA1
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см. техническую документацию
см. техническую документацию
4 800 ֏
от 2 шт. —
4 230 ֏
от 5 шт. —
3 820 ֏
Добавить в корзину 1 шт.
на сумму 4 800 ֏
Описание
Электроэлемент
SIC SCHOTTKY DIODE, 650V, 20A, TO-220; Product Range:CoolSiC 6G 650V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:20A; Total Capacitive Charge Qc:12.2nC; Dio
Технические параметры
| Brand | Infineon Technologies |
| Configuration | Single |
| Factory Pack Quantity | 500 |
| If - Forward Current | 20 A |
| Ifsm - Forward Surge Current | 47 A |
| Ir - Reverse Current | 0.8 uA |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Package / Case | TO-220-2 |
| Packaging | Tube |
| Part # Aliases | IDH08G65C6 |
| Pd - Power Dissipation | 63 W |
| Product | Schottky Silicon Carbide Diodes |
| Product Category | Schottky Diodes Rectifiers |
| RoHS | Details |
| Technology | SiC |
| Unit Weight | 0.070548 oz |
| Vf - Forward Voltage | 1.25 V |
| Vrrm - Repetitive Reverse Voltage | 650 V |
| Average Rectified Current (Io) | 20A |
| Diode Configuration | Single |
| Forward Voltage (Vf@If) | 1.25V@8A |
| Reverse Leakage Current (Ir) | 800nA@420V |
| Reverse Voltage (Vr) | 650V |
| Diode Technology | SiC Schottky |
| Diode Type | SiC Schottky |
| Maximum Continuous Forward Current | 8A |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | PG-TO220 |
| Peak Reverse Repetitive Voltage | 650V |
| Pin Count | 2 |
| Rectifier Type | Schottky Diode |
| Вес, г | 1 |
Техническая документация
Datasheet IDH08G65C6XKSA1
pdf, 1008 КБ
Диоды импортные
pdf, 304 КБ
