IPW60R070CFD7XKSA1
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см. техническую документацию
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8 900 ֏
от 2 шт. —
8 200 ֏
1 шт.
на сумму 8 900 ֏
Описание
Электроэлемент
MOSFET, N-CH, 600V, 31A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.057ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Powe
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 31A(Tc) |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2721pF @ 400V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Part Status | Active |
| Power Dissipation (Max) | 156W(Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 15.1A, 10V |
| Series | CoolMOSв(ў CFD7 |
| Supplier Device Package | PG-TO247-3 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 760ВµA |
| Continuous Drain Current (Id) | 31A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 70mΩ@15.1A, 10V |
| Drain Source Voltage (Vdss) | 650V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4.5V@760uA |
| Input Capacitance (Ciss@Vds) | 2.721nF@400V |
| Power Dissipation (Pd) | 156W |
| Total Gate Charge (Qg@Vgs) | 67nC@10V |
| Type | N Channel |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 240 |
| Fall Time: | 6 ns |
| Id - Continuous Drain Current: | 31 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | IPW60R070CFD7 SP001617990 |
| Pd - Power Dissipation: | 156 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 67 nC |
| Rds On - Drain-Source Resistance: | 57 mOhms |
| Rise Time: | 23 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 99 ns |
| Typical Turn-On Delay Time: | 26 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Channel Type | N |
| Maximum Continuous Drain Current | 31 A |
| Maximum Drain Source Resistance | 0.07 Ω |
| Maximum Drain Source Voltage | 600 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Number of Elements per Chip | 1 |
| Package Type | TO-247 |
| Pin Count | 3 |
| Вес, г | 7.971 |
Техническая документация
Datasheet
pdf, 1322 КБ
Datasheet IPW60R070CFD7XKSA1
pdf, 1384 КБ
