IPW60R080P7XKSA1
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см. техническую документацию
см. техническую документацию
6 300 ֏
от 2 шт. —
5 800 ֏
от 5 шт. —
5 300 ֏
1 шт.
на сумму 6 300 ֏
Описание
Электроэлемент
MOSFET, N-CH, 600V, 37A, 129W, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.069ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 37A(Tc) |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2180pF @ 400V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Part Status | Active |
| Power Dissipation (Max) | 129W(Tc) |
| Rds On (Max) @ Id, Vgs | 80 mOhm @ 11.8A, 10V |
| Series | CoolMOSв(ў P7 |
| Supplier Device Package | PG-TO247-3 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 590ВµA |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 40 A |
| Maximum Drain Source Resistance | 0.08 Ω |
| Maximum Drain Source Voltage | 600 V |
| Maximum Gate Threshold Voltage | 4V |
| Number of Elements per Chip | 1 |
| Package Type | TO-247 |
| Pin Count | 3 |
| Transistor Material | Si |
| Вес, г | 8.017 |
Техническая документация
Datasheet IPW60R080P7XKSA1
pdf, 1362 КБ
