IRF7905
![IRF7905](https://static.chipdip.ru/lib/304/DOC005304627.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
2 860 ֏
от 2 шт. —
2 380 ֏
1 шт.
на сумму 2 860 ֏
Описание
Электроэлемент
MOSFET, DUAL N-CH, 30V, 7.8A, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:7.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0174ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Технические параметры
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25°C | 7.8A, 8.9A |
Drain to Source Voltage (Vdss) | 30V |
Family | FETs-Arrays |
FET Feature | Logic Level Gate |
FET Type | 2 N-Channel(Dual) |
Gate Charge (Qg) @ Vgs | 6.9nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 600pF @ 15V |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC(0.154", 3.90mm Width) |
Packaging | Tube |
PCN Assembly/Origin | Backend Wafer Transfer 23/Oct/2013 |
PCN Obsolescence/ EOL | Multiple Devices 25/Apr/2014 |
Power - Max | 2W |
Product Training Modules | High Voltage Integrated Circuits(HVIC Gate Drivers)Discrete Power MOSFETs 40V and Below |
Rds On (Max) @ Id, Vgs | 21.8 mOhm @ 7.8A, 10V |
Series | HEXFET® |
Standard Package | 95 |
Supplier Device Package | 8-SO |
Vgs(th) (Max) @ Id | 2.25V @ 25µA |
Вес, г | 0.15 |
Техническая документация
IRF7905PBF datasheet
pdf, 336 КБ
Документация
pdf, 332 КБ