IRFR430A
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см. техническую документацию
см. техническую документацию
1 120 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
850 ֏
от 10 шт. —
750 ֏
Добавить в корзину 2 шт.
на сумму 2 240 ֏
Альтернативные предложения1
Описание
Электроэлемент
Описание Транзистор N-MOSFET, полевой, 500В, 3,2А, 110Вт, DPAK Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | Vishay Semiconductors |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 2000 |
| Fall Time | 16 ns |
| Height | 2.39 mm |
| Id - Continuous Drain Current | 5 A |
| Length | 6.73 mm |
| Manufacturer | Vishay |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252AA-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 110 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 1.7 Ohms |
| Rise Time | 27 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 17 ns |
| Typical Turn-On Delay Time | 8.7 ns |
| Unit Weight | 0.050717 oz |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 6.22 mm |
| Case | DPAK, TO252 |
| Drain current | 3.2A |
| Drain-source voltage | 500V |
| Gate charge | 24nC |
| Gate-source voltage | ±30V |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting | SMD |
| On-state resistance | 1.7Ω |
| Polarisation | unipolar |
| Power dissipation | 110W |
| Type of transistor | N-MOSFET |
| Automotive | No |
| Channel Type | N |
| ECCN (US) | EAR99 |
| Maximum Continuous Drain Current (A) | 5 |
| Maximum Drain Source Resistance (mOhm) | 1700@10V |
| Maximum Drain Source Voltage (V) | 500 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum IDSS (uA) | 25 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 110000 |
| Minimum Operating Temperature (°C) | -55 |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 16 |
| Typical Gate Charge @ 10V (nC) | 24(Max) |
| Typical Gate Charge @ Vgs (nC) | 24(Max)@10V |
| Typical Input Capacitance @ Vds (pF) | 750@1V |
| Typical Rise Time (ns) | 27 |
| Typical Turn-Off Delay Time (ns) | 17 |
| Typical Turn-On Delay Time (ns) | 8.7 |
| Вес, г | 0.66 |
