IRF7855
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см. техническую документацию
см. техническую документацию
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Описание
Электроэлемент
MOSFET, N-CH, 12A, 60V, SOIC, Transistor Polarity:N Channel, Continuous Drain Current Id:12A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.0094ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4.9V, Power Dissipation , RoHS Compliant: Yes
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current - (A) | 12 |
| Maximum Drain Source Resistance - (mOhm) | 9.4@10V |
| Maximum Drain Source Voltage - (V) | 60 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Gate Threshold Voltage - (V) | 4.9 |
| Maximum Power Dissipation - (mW) | 2500 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Process Technology | HEXFET |
| Standard Package Name | SOP |
| Supplier Package | SOIC |
| Typical Gate Charge @ 10V - (nC) | 26 |
| Typical Gate Charge @ Vgs - (nC) | 26@10V |
| Typical Input Capacitance @ Vds - (pF) | 1560@25V |
| Typical Output Capacitance - (pF) | 1910 |
| Вес, г | 0.2 |
Техническая документация
IRF7855pbf DATASHEET
pdf, 613 КБ
