ZTX951
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см. техническую документацию
см. техническую документацию
1 150 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
880 ֏
от 10 шт. —
770 ֏
от 100 шт. —
680 ֏
2 шт.
на сумму 2 300 ֏
Описание
Электроэлемент
BIPOLAR TRANSISTOR, PNP, -60V, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:60V, Transition Frequency ft:120MHz, Power Dissipation Pd:1.2W, DC Collector Current:-4A, DC Current Gain hFE:200hFE, No. of Pins:3Pins, MSL:-, RoHS Compliant: Yes
Технические параметры
| Brand | Diodes Incorporated |
| Collector- Base Voltage VCBO | -100 V |
| Collector- Emitter Voltage VCEO Max | 60 V |
| Configuration | Single |
| Continuous Collector Current | -4 A |
| Emitter- Base Voltage VEBO | -6 V |
| Factory Pack Quantity | 4000 |
| Gain Bandwidth Product fT | 120 MHz |
| Height | 4.01 mm |
| Length | 4.77 mm |
| Manufacturer | Diodes Incorporated |
| Maximum DC Collector Current | 4 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Package / Case | TO-92-3 |
| Packaging | Bulk |
| Pd - Power Dissipation | 1.2 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | ZTX951 |
| Transistor Polarity | PNP |
| Unit Weight | 0.015873 oz |
| Width | 2.41 mm |
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 100 V |
| Collector- Emitter Voltage VCEO Max: | 60 V |
| Collector-Emitter Saturation Voltage: | 220 mV |
| Configuration: | Single |
| Continuous Collector Current: | -4 A |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Gain Bandwidth Product fT: | 120 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 4 A |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 1.2 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | ZTX951 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Maximum Collector Base Voltage | 100 V |
| Maximum Collector Emitter Voltage | -60 V |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Operating Frequency | 120 MHz |
| Maximum Power Dissipation | 1.2 W |
| Minimum DC Current Gain | 100 |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-92 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | PNP |
| Вес, г | 0.242 |
