SI2325DS
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Описание
Электроэлемент
P CHANNEL MOSFET, -150V, 690mA, TO-236, Transistor Polarity:P Channel, Continuous Drain Current Id:-530mA, Drain Source Voltage Vds:-150V, On Resistance Rds(on):1ohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-4.5V , RoHS Compliant: Yes
Технические параметры
| Transistor Polarity | P Channel; Continuous Drain Current Id |
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 530 mA |
| Maximum Drain Source Resistance | 1.2 Ω |
| Maximum Drain Source Voltage | 150 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 750 mW |
| Minimum Gate Threshold Voltage | 2.5V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 7.7 nC @ 10 V |
| Width | 1.4mm |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 0.53 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 0.53 |
| Maximum Drain Source Resistance (mOhm) | 1200@10V |
| Maximum Drain Source Voltage (V) | 150 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum IDSS (uA) | 1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 166 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 1250 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1250 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 1.6 |
| Minimum Gate Threshold Voltage (V) | 2.5 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| Typical Fall Time (ns) | 11 |
| Typical Gate Charge @ 10V (nC) | 7.7 |
| Typical Gate Charge @ Vgs (nC) | 7.7@10V |
| Typical Gate Plateau Voltage (V) | 5 |
| Typical Gate to Drain Charge (nC) | 2.5 |
| Typical Gate to Source Charge (nC) | 1.5 |
| Typical Input Capacitance @ Vds (pF) | 340@25V |
| Typical Output Capacitance (pF) | 30 |
| Typical Reverse Recovery Charge (nC) | 90 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 16@25V |
| Typical Rise Time (ns) | 11 |
| Typical Turn-Off Delay Time (ns) | 16 |
| Typical Turn-On Delay Time (ns) | 7 |
| Вес, г | 0.05 |
Техническая документация
Datasheet
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Datasheet Si2302CDS
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Datasheet SI2325DS-T1-E3
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Документация
pdf, 158 КБ
