BSZ110N06NS3G
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Описание
Электроэлемент
N-Channel MOSFET, 20 A, 60 V, 8-Pin TSDSON Infineon BSZ110N06NS3GATMA1
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Factory Pack Quantity | 5000 |
| Fall Time | 6 ns |
| Height | 1.1 mm |
| Id - Continuous Drain Current | 20 A |
| Length | 3.3 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TSDSON-8 |
| Packaging | Reel |
| Part # Aliases | BSZ110N06NS3GATMA1 BSZ110N06NS3GXT SP000453676 |
| Pd - Power Dissipation | 2.1 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 11 mOhms |
| Rise Time | 77 ns |
| RoHS | Details |
| Series | OptiMOS 3 |
| Technology | Si |
| Tradename | OptiMOS |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 14 ns |
| Typical Turn-On Delay Time | 10 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 3.3 mm |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 5000 |
| Fall Time: | 6 ns |
| Forward Transconductance - Min: | 16 S |
| Id - Continuous Drain Current: | 20 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TSDSON-8 |
| Part # Aliases: | BSZ11N6NS3GXT SP000453676 BSZ110N06NS3GATMA1 |
| Pd - Power Dissipation: | 50 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 25 nC |
| Rds On - Drain-Source Resistance: | 8.8 mOhms |
| Rise Time: | 77 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 14 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Вес, г | 0.4 |
Техническая документация
Datasheet
pdf, 1737 КБ
